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Low-temperature bonding of silicon and polycrystalline diamond by reactive nanolayers with ultra-low thermal boundary resistance

Jul 28,2022

Thermal management is a key challenge in modern electronics, and recent key innovations have focused on incorporatingDiamondDirect integration onto semiconductors for efficient cooling. However, achieving a diamond/semiconductor connection with low thermal boundary resistance (TBR), minimal thermal budget and sufficient mechanical robustness at the same time remains a formidable challenge.

The Yi Zhong research team of the School of Electronic Science and Engineering of Xiamen University proposed a collective wafer-level bonding technology, which is connected at 200°C through a reactive metal nano-layer.polycrystalline diamondand semiconductors. The resulting silicon/diamond connection has an ultra-low TBR of 9.74m2GW -1, significantly better than traditional chip connection technology. These connections also exhibit excellent reliability and can withstand at least 1000 thermal cycles and 1000 hours of high temperature/humidity testing. These properties are related to the recrystallized microstructure of the designed metal interlayer. This demonstration represents an advance in the low-temperature and high-throughput integration of diamond on semiconductors, with the potential to enable current thermally limited electronic applications. The relevant research results were published on January 11 in the Journal of temperature bonding & polycrystalline entitled "Low-Materials Science of Si and Technology diamond with ultra-low thermal boundary resistance by reactive nanolayers.

Original link: https://doi.org/10.1016/j.jmst. 2023.11.043

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